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CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies

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CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies

Brand Name : Infineon Technologies

Model Number : CY7C2663KV18-450BZI

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Synchronous, QDR II+

Memory Size : 144Mbit

Memory Organization : 8M x 18

Memory Interface : Parallel

Clock Frequency : 450 MHz

Write Cycle Time - Word, Page : -

Access Time : -

Voltage - Supply : 1.7V ~ 1.9V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 165-LBGA

Supplier Device Package : 165-FBGA (15x17)

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Product Details

Functional Description

The CY7C266 is a high-performance 8192-word by 8-bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

Features

• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
— 20 ns (Commercial)
• Low power
— 660 mW (Commercial)
• Super low standby power
— Less than 85 mW when deselected
• EPROM technology 100% programmable
• 5V ±10% VCC, commercial and military
• TTL-compatible I/O
• Direct replacement for 27C64 EPROMs

Specifications

Attribute Attribute Value
Manufacturer Cypress Semiconductor
Product Category Memory ICs
Series CY7C2663KV18
Type Synchronous
Packaging Tray
Mounting-Style SMD/SMT
Package-Case 165-LBGA
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 1.7 V ~ 1.9 V
Supplier-Device-Package 165-FBGA (15x17)
Memory Capacity 144M (8M x 18)
Memory-Type SRAM - Synchronous, QDR II+
Speed 450MHz
Access-Time 0.45 ns
Format-Memory RAM
Maximum Operating Temperature + 85 C
Operating temperature range - 40 C
Interface-Type Parallel
Organization 8 M x 18
Supply-Current-Max 940 mA
Supply-Voltage-Max 1.9 V
Supply-Voltage-Min 1.7 V
Package-Case FBGA-165
Maximum-Clock-Frequency 450 MHz

Descriptions

SRAM - Synchronous, QDR II+ Memory IC 144Mb (8M x 18) Parallel 450MHz 165-FBGA (15x17)
SRAM Chip Sync Dual 1.8V 144M-Bit 8M x 18 0.45ns 165-Pin FBGA Tray
SRAM 144Mb 1.8V 450Mhz 8M x 18 QDR II SRAM

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