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CY7C1470V25-200BZI IC SRAM 72MBIT PARALLEL 165FBGA Infineon Technologies

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CY7C1470V25-200BZI IC SRAM 72MBIT PARALLEL 165FBGA Infineon Technologies

Name: CY7C1470V25200BZI IC SRAM 72MBIT PARALLEL 165FBGA Infineon Technologies
Brand: Infineon Technologies
Price: 1 USD

Brand Name : Infineon Technologies

Model Number : CY7C1470V25-200BZI

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Synchronous, SDR

Memory Size : 72Mbit

Memory Organization : 2M x 36

Memory Interface : Parallel

Clock Frequency : 200 MHz

Write Cycle Time - Word, Page : -

Access Time : 3 ns

Voltage - Supply : 2.375V ~ 2.625V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 165-LBGA

Supplier Device Package : 165-FBGA (15x17)

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Product Details

Functional Description

The CY7C1471V33 is 3.3 V, 2 M × 36 synchronous flow through burst SRAMs designed specifically to support unlimited true back-to-back read or write operations without the insertion of wait states. The CY7C1471V33 is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive read or write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent write-read transitions.

Features

■ No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles
■ Supports up to 133 MHz bus operations with zero wait states
■ Data is transferred on every clock
■ Pin compatible and functionally equivalent to ZBT™ devices
■ Internally self timed output buffer control to eliminate the need to use OE
■ Registered inputs for flow through operation
■ Byte Write capability
■ 3.3 V/2.5 V I/O supply (VDDQ)
■ Fast clock-to-output times
❐ 6.5 ns (for 133-MHz device)
■ Clock enable (CEN) pin to enable clock and suspend operation
■ Synchronous self timed writes
■ Asynchronous output enable (OE)
■ CY7C1471V33 available in JEDEC-standard Pb-free 100-pin TQFP
■ Three chip enables (CE1, CE2, CE3) for simple depth expansion
■ Automatic power down feature available using ZZ mode or CE deselect
■ Burst capability – linear or interleaved burst order
■ Low standby power

Specifications

Attribute	Attribute Value
Manufacturer	Cypress Semiconductor
Product Category	Memory ICs
Series	NoBL™
Packaging	Tray Alternate Packaging
Package-Case	165-LBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	2.375 V ~ 2.625 V
Supplier-Device-Package	165-FBGA (15x17)
Memory Capacity	72M (2M x 36)
Memory-Type	SRAM - Synchronous
Speed	200MHz
Format-Memory	RAM

Descriptions

SRAM - Synchronous Memory IC 72Mb (2M x 36) Parallel 200MHz 3ns 165-FBGA (15x17)

SRAM Chip Sync Quad 2.5V 72M-Bit 2M x 36 3ns 165-Pin FBGA Tray

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